MOSFET N-CH 650V 12A I2PAK
| Part | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Supplier Device Package | Package / Case | Current - Continuous Drain (Id) @ 25°C | Technology | Drain to Source Voltage (Vdss) | FET Type | Mounting Type | Operating Temperature | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | 279 mOhm | 90 W | 31 nC | 1250 pF | 5 V | I2PAK | I2PAK TO-262-3 Long Leads TO-262AA | 12 A | MOSFET (Metal Oxide) | 650 V | N-Channel | Through Hole | 150 °C | 25 V | 10 V |