M30082040108X0PWAR

Obsolete

Renesas Electronics Corporation

NON-VOLATILE 8MB HIGH PERFORMANCE MRAM, 3.0V

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M30082040108X0PWAR

Obsolete

Renesas Electronics Corporation

NON-VOLATILE 8MB HIGH PERFORMANCE MRAM, 3.0V

Find alt

Alpha

Description Specifications Series Pricing CAD Documents

Description

General part information

M3008204 Series

The M3008204 series is a 8Mbit high performance non-volatile MRAM with speed up to 108MHz. The M3008204 offers superior reliability and greater than 20-year data retention (at 85°C). It does not require backup battery or capacitor(s) compared to non-volatile SRAM. The M3008204 supports Quad SPI, SDR and DDR interface. It operates at 3V typical from -40°C to +105°C (industrial plus version) and offered in an SOIC or DFN (WSON) package.

Technical Specifications

Parameters and characteristics for this part

Specification	M30082040108X0PWAR

Clock Frequency	108 MHz
Memory Depth	2 M
Memory Format	RAM
Memory Interface (Type)	SPI
Memory Size	1 MB
Memory Type	Non-Volatile
Memory Width	4 bit
Mounting Type	Surface Mount
Operating Temperature (Max)	105 °C
Operating Temperature (Min)	-40 °C
Package / Case	8-VDFN Exposed Pad
Package Length	5 mm
Package Name	8-DFN
Package Width	6 mm
Technology	MRAM (Magnetoresistive RAM)
Voltage - Supply (Maximum)	3.6 V
Voltage - Supply (Minimum)	2.7 V

M3008204 Series

Part	Memory Depth	Memory Width	Memory Format	Package Name	Package Length	Package Width	Voltage - Supply (Maximum)	Voltage - Supply (Minimum)	Memory Type	Memory Size	Mounting Type	Technology	Clock Frequency	Operating Temperature (Min)	Operating Temperature (Max)	Memory Interface (Type)	Package / Case
Renesas Electronics Corporation M30082040108X0PSAR	2 M	4 bit	RAM	8-SOIC	0.209 in	5.3 mm	3.6 V	2.7 V	Non-Volatile	1 MB	Surface Mount	MRAM (Magnetoresistive RAM)	108 MHz	-40 °C	105 °C
Renesas Electronics Corporation M30082040054X0ISAY	2 M	4 bit	RAM	8-SOIC	0.209 in	5.3 mm	3.6 V	2.7 V	Non-Volatile	1 MB	Surface Mount	MRAM (Magnetoresistive RAM)	54 MHz	-40 °C	85 °C
Renesas Electronics Corporation M30082040054X0PSAR	2 M	4 bit	RAM	8-SOIC	0.209 in	5.3 mm	3.6 V	2.7 V	Non-Volatile	1 MB	Surface Mount	MRAM (Magnetoresistive RAM)	54 MHz	-40 °C	105 °C	SPI
Renesas Electronics Corporation M30082040054X0PSAY	2 M	4 bit	RAM	8-SOIC	0.209 in	5.3 mm	3.6 V	2.7 V	Non-Volatile	1 MB	Surface Mount	MRAM (Magnetoresistive RAM)	54 MHz	-40 °C	105 °C
Renesas Electronics Corporation M30082040108X0PWAY	2 M	4 bit	RAM	8-DFN	5 mm	6 mm	3.6 V	2.7 V	Non-Volatile	1 MB	Surface Mount	MRAM (Magnetoresistive RAM)	108 MHz	-40 °C	105 °C		8-WDFN Exposed Pad
Renesas Electronics Corporation M30082040108X0PSAY	2 M	4 bit	RAM	8-SOIC	0.209 in	5.3 mm	3.6 V	2.7 V	Non-Volatile	1 MB	Surface Mount	MRAM (Magnetoresistive RAM)	108 MHz	-40 °C	105 °C
Renesas Electronics Corporation M30082040054X0ISAR	2 M	4 bit	RAM	8-SOIC	0.209 in	5.3 mm	3.6 V	2.7 V	Non-Volatile	1 MB	Surface Mount	MRAM (Magnetoresistive RAM)	54 MHz	-40 °C	85 °C
Renesas Electronics Corporation M30082040108X0PWAR	2 M	4 bit	RAM	8-DFN	5 mm	6 mm	3.6 V	2.7 V	Non-Volatile	1 MB	Surface Mount	MRAM (Magnetoresistive RAM)	108 MHz	-40 °C	105 °C	SPI	8-VDFN Exposed Pad
Renesas Electronics Corporation M30082040108X0IWAR	2 M	4 bit	RAM	8-DFN	5 mm	6 mm	3.6 V	2.7 V	Non-Volatile	1 MB	Surface Mount	MRAM (Magnetoresistive RAM)	108 MHz	-40 °C	85 °C		8-WDFN Exposed Pad
Renesas Electronics Corporation M30082040108X0IWAY	2 M	4 bit	RAM	8-DFN	5 mm	6 mm	3.6 V	2.7 V	Non-Volatile	1 MB	Surface Mount	MRAM (Magnetoresistive RAM)	108 MHz	-40 °C	85 °C		8-WDFN Exposed Pad

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

M30082040108X0PWAR | Datasheet

M3004204, M3008204, M3016204, M1004204, M1008204, M1016204 Datasheet