
M3008204 Series
Manufacturer: Renesas Electronics Corporation
NON-VOLATILE 8MB HIGH PERFORMANCE MRAM, 3.0V
| Part | Memory Depth | Memory Width | Memory Format | Package Name | Package Length | Package Width | Voltage - Supply (Maximum) | Voltage - Supply (Minimum) | Memory Type | Memory Size | Mounting Type | Technology | Clock Frequency | Operating Temperature (Min) | Operating Temperature (Max) | Memory Interface (Type) | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics Corporation | 2 M | 4 bit | RAM | 8-SOIC | 0.209 in | 5.3 mm | 3.6 V | 2.7 V | Non-Volatile | 1 MB | Surface Mount | MRAM (Magnetoresistive RAM) | 108 MHz | -40 °C | 105 °C | ||
Renesas Electronics Corporation | 2 M | 4 bit | RAM | 8-SOIC | 0.209 in | 5.3 mm | 3.6 V | 2.7 V | Non-Volatile | 1 MB | Surface Mount | MRAM (Magnetoresistive RAM) | 54 MHz | -40 °C | 85 °C | ||
Renesas Electronics Corporation | 2 M | 4 bit | RAM | 8-SOIC | 0.209 in | 5.3 mm | 3.6 V | 2.7 V | Non-Volatile | 1 MB | Surface Mount | MRAM (Magnetoresistive RAM) | 54 MHz | -40 °C | 105 °C | SPI | |
Renesas Electronics Corporation | 2 M | 4 bit | RAM | 8-SOIC | 0.209 in | 5.3 mm | 3.6 V | 2.7 V | Non-Volatile | 1 MB | Surface Mount | MRAM (Magnetoresistive RAM) | 54 MHz | -40 °C | 105 °C | ||
Renesas Electronics Corporation | 2 M | 4 bit | RAM | 8-DFN | 5 mm | 6 mm | 3.6 V | 2.7 V | Non-Volatile | 1 MB | Surface Mount | MRAM (Magnetoresistive RAM) | 108 MHz | -40 °C | 105 °C | 8-WDFN Exposed Pad | |
Renesas Electronics Corporation | 2 M | 4 bit | RAM | 8-SOIC | 0.209 in | 5.3 mm | 3.6 V | 2.7 V | Non-Volatile | 1 MB | Surface Mount | MRAM (Magnetoresistive RAM) | 108 MHz | -40 °C | 105 °C | ||
Renesas Electronics Corporation | 2 M | 4 bit | RAM | 8-SOIC | 0.209 in | 5.3 mm | 3.6 V | 2.7 V | Non-Volatile | 1 MB | Surface Mount | MRAM (Magnetoresistive RAM) | 54 MHz | -40 °C | 85 °C | ||
Renesas Electronics Corporation | 2 M | 4 bit | RAM | 8-DFN | 5 mm | 6 mm | 3.6 V | 2.7 V | Non-Volatile | 1 MB | Surface Mount | MRAM (Magnetoresistive RAM) | 108 MHz | -40 °C | 105 °C | SPI | 8-VDFN Exposed Pad |
Renesas Electronics Corporation | 2 M | 4 bit | RAM | 8-DFN | 5 mm | 6 mm | 3.6 V | 2.7 V | Non-Volatile | 1 MB | Surface Mount | MRAM (Magnetoresistive RAM) | 108 MHz | -40 °C | 85 °C | 8-WDFN Exposed Pad | |
Renesas Electronics Corporation | 2 M | 4 bit | RAM | 8-DFN | 5 mm | 6 mm | 3.6 V | 2.7 V | Non-Volatile | 1 MB | Surface Mount | MRAM (Magnetoresistive RAM) | 108 MHz | -40 °C | 85 °C | 8-WDFN Exposed Pad |