IPG20N06S2L65AUMA1

Obsolete

Infineon Technologies

MOSFET

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IPG20N06S2L65AUMA1

Obsolete

Infineon Technologies

MOSFET

Deep-Dive with AI

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPG20N06S2L65AUMA1

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IPG20N Series

Part	Technology	FET Feature	Drain to Source Voltage (Vdss)	Grade	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs(th) (Max) @ Id	Mounting Type	Qualification	Configuration	Vgs(th) (Max) @ Id [Max]	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies IPG20N06S2L35ATMA1	MOSFET (Metal Oxide)	Logic Level Gate	55 V	Automotive	20 A	65 W	PG-TDSON-8-4	23 nC	-55 °C	175 ░C	35 mOhm	790 pF	8-PowerVDFN	2 V	Surface Mount	AEC-Q101	2 N-Channel (Dual)
Infineon Technologies IPG20N06S2L50ATMA1	MOSFET (Metal Oxide)	Logic Level Gate	55 V		20 A	51 W	PG-TDSON-8-4	17 nC	-55 °C	175 ░C			8-PowerVDFN		Surface Mount		2 N-Channel (Dual)	2 V	50 mOhm	560 pF
Infineon Technologies IPG20N06S3L-35	MOSFET (Metal Oxide)	Logic Level Gate	55 V		20 A	30 W	PG-TDSON-8-4	23 nC	-55 °C	175 ░C	35 mOhm	1730 pF	8-PowerVDFN		Surface Mount		2 N-Channel (Dual)
Infineon Technologies IPG20N04S4L07ATMA1	MOSFET (Metal Oxide)	Logic Level Gate	40 V	Automotive	20 A	65 W	PG-TDSON-8-4		-55 °C	175 ░C		3980 pF	8-PowerVDFN	2.2 V	Surface Mount	AEC-Q101	2 N-Channel (Dual)		7.2 mOhm		50 nC
Infineon Technologies IPG20N06S2L65AUMA1
Infineon Technologies IPG20N04S4L08ATMA1	MOSFET (Metal Oxide)	Logic Level Gate	40 V	Automotive	20 A	54 W	PG-TDSON-8-4		-55 °C	175 ░C	8.2 mOhm	3050 pF	8-PowerVDFN	2.2 V	Surface Mount	AEC-Q101	2 N-Channel (Dual)				39 nC
Infineon Technologies IPG20N10S436AATMA1	MOSFET (Metal Oxide)		100 V	Automotive	20 A	43 W	PG-TDSON-8-10	15 nC	-55 °C	175 ░C	36 mOhm	990 pF	8-PowerVDFN	3.5 V	Surface Mount Wettable Flank	AEC-Q101	2 N-Channel (Dual)
Infineon Technologies IPG20N04S4L08AATMA1	MOSFET (Metal Oxide)	Logic Level Gate	40 V	Automotive	20 A	54 W	PG-TDSON-8-10		-55 °C	175 ░C	8.2 mOhm	3050 pF	8-PowerVDFN	2.2 V	Surface Mount Wettable Flank	AEC-Q101	2 N-Channel (Dual)				39 nC
Infineon Technologies IPG20N04S412AATMA1	MOSFET (Metal Oxide)		40 V	Automotive	20 A	41 W	PG-TDSON-8-10		-55 °C	175 ░C	12.2 mOhm	1470 pF	8-PowerVDFN	4 V	Surface Mount Wettable Flank	AEC-Q101	2 N-Channel (Dual)				18 nC
Infineon Technologies IPG20N04S408ATMA1	MOSFET (Metal Oxide)		40 V		20 A	65 W	PG-TDSON-8-4		-55 °C	175 ░C	7.6 mOhm	2940 pF	8-PowerVDFN	4 V	Surface Mount		2 N-Channel (Dual)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IPG20N Series

Mosfet Array

Documents

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