DMTH4M90LPSW-13

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Diodes Inc

40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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Diodes Inc

40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	DMTH4M90LPSW-13

Current - Continuous Drain (Id) @ 25°C	356 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	111 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	9308 pF
Mounting Type	Wettable Flank, Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	200 W, 4.2 W
Rds On (Max) @ Id, Vgs [Max]	0.9 mOhm
Supplier Device Package	PowerDI5060-8 (Type UX)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

40V +175°C N-Channel Enhancement Mode MOSFET

Part	Package / Case	Vgs(th) (Max) @ Id	Mounting Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]
Diodes Inc DMTH4M90LPSW-13	8-PowerTDFN	3 V	Surface Mount Wettable Flank	PowerDI5060-8 (Type UX)	4.5 V 10 V	-55 °C	175 ░C	20 V	MOSFET (Metal Oxide)	356 A	40 V	4.2 W 200 W	N-Channel	9308 pF	111 nC	0.9 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This new generation MOSFET features low on-resistance and fast switching, making it ideal for high-efficiency power-management applications.