DMTH4M90LPSW Series

40V +175°C N-Channel Enhancement Mode MOSFET

Catalog

40V +175°C N-Channel Enhancement Mode MOSFET

Part	Package / Case	Vgs(th) (Max) @ Id	Mounting Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]
Diodes Inc DMTH4M90LPSW-13	8-PowerTDFN	3 V	Surface Mount Wettable Flank	PowerDI5060-8 (Type UX)	4.5 V 10 V	-55 °C	175 ░C	20 V	MOSFET (Metal Oxide)	356 A	40 V	4.2 W 200 W	N-Channel	9308 pF	111 nC	0.9 mOhm

Catalog

40V +175°C N-Channel Enhancement Mode MOSFET

Key Features

• Rated to +175°C – Ideal for High Ambient Temperature Environments

• 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application

• Thermally Efficient Package-Cooler Running Applications

• High Conversion Efficiency

• Wettable Flank for Improved Optical Inspection

• Low RDS(ON)– Minimizes On-State Losses

• < 1.1mm Package Profile – Ideal for Thin Applications

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), pleasecontact usor your local Diodes representative.https://www.diodes.com/quality/product-definitions/

Description

This new generation MOSFET features low on-resistance and fast switching, making it ideal for high-efficiency power-management applications.