PMGD290XN,115
NRNDNexperia USA Inc.
TRANSISTOR: N-MOSFET X2; UNIPOLAR; 20V; 860MA; IDM: 1.72A; 410MW
PMGD290XN,115
NRNDNexperia USA Inc.
TRANSISTOR: N-MOSFET X2; UNIPOLAR; 20V; 860MA; IDM: 1.72A; 410MW
Description
General part information
PMGD290XN Series
Dual N-channel TrenchMOS extremely low level FET
Technical Specifications
Parameters and characteristics for this part
| Specification | PMGD290XN,115 |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel |
| Configuration - Features | Dual |
| Current - Continuous Drain (Id) | 860 mA |
| Drain to Source Voltage (Vdss) | 20 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Max) | 0.72 nC |
| Input Capacitance (Ciss) (Max) | 34 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Package Name | 6-TSSOP |
| Power - Max | 410 mW |
| Rds On (Max) | 350 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 1.5 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Datasheet
Wave soldering profile
Failure signature of Electrical Overstress on Power MOSFETs
RC Thermal Models
plastic, surface-mounted package; 6 leads; 0.65 mm pitch; 2.1 mm x 1.25 mm x 0.95 mm body
Power MOSFET frequently asked questions and answers
plastic, surface-mounted package; 6 leads; 1.3 mm pitch; 2 mm x 1.25 mm x 0.95 mm body
Understanding power MOSFET data sheet parameters
LFPAK MOSFET thermal design guide, Chinese version
Low temperature soldering, application study
LFPAK MOSFET thermal design guide - Part 2
Nexperia package poster
Power MOSFET single-shot and repetitive avalanche ruggedness rating
Using power MOSFETs in parallel
Understanding power MOSFET data sheet parameters
Questions about package outline drawings
TSSOP6; Reel pack for SMD, 7"; Q2/T3 product orientation
MAR_SOT363 Topmark
Reflow soldering profile
PicoGate leaded logic portfolio guide