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Dual N-channel TrenchMOS extremely low level FET
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Dual N-channel TrenchMOS extremely low level FET
Dual N-channel TrenchMOS extremely low level FET
| Part | Current - Continuous Drain (Id) | FET Feature | Vgs(th) (Max) | Package Name | Channel Count | Configuration | Configuration - Features | Technology | Mounting Type | Power - Max | Input Capacitance (Ciss) (Max) | Drain to Source Voltage (Vdss) | Gate Charge (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Package / Case | Rds On (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 860 mA | Logic Level Gate | 1.5 V | 6-TSSOP | 2 | N-Channel | Dual | MOSFET (Metal Oxide) | Surface Mount | 410 mW | 34 pF | 20 V | 0.72 nC | -55 °C | 150 °C | 6-TSSOP SC-88 SOT-363 | 350 mOhm |