IRF7420TRPBF

Obsolete

Infineon Technologies

MOSFET P-CH 12V 11.5A 8SO

Search across all available documentation for this part.

Obsolete

Infineon Technologies

MOSFET P-CH 12V 11.5A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7420TRPBF

Current - Continuous Drain (Id) @ 25°C	11.5 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Input Capacitance (Ciss) (Max) @ Vds	3529 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	14 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	900 mV

Part	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Technology	Drain to Source Voltage (Vdss)	Package / Case	Package / Case [y]	Package / Case [x]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C
Infineon Technologies IRF7420TRPBF	8 V	38 nC	P-Channel	14 mOhm	-55 °C	150 °C	1.8 V 4.5 V	Surface Mount	MOSFET (Metal Oxide)	12 V	8-SOIC	3.9 mm	0.154 in	8-SO	3529 pF	900 mV	2.5 W	11.5 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$