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MOSFET P-CH 12V 11.5A 8SO
| Part | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Technology | Drain to Source Voltage (Vdss) | Package / Case | Package / Case [y] | Package / Case [x] | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 8 V | 38 nC | P-Channel | 14 mOhm | -55 °C | 150 °C | 1.8 V 4.5 V | Surface Mount | MOSFET (Metal Oxide) | 12 V | 8-SOIC | 3.9 mm | 0.154 in | 8-SO | 3529 pF | 900 mV | 2.5 W | 11.5 A |