TSM045NB06CR RLG

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Taiwan Semiconductor Corporation

MOSFET N-CH 60V 16A/104A 8PDFN

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Taiwan Semiconductor Corporation

MOSFET N-CH 60V 16A/104A 8PDFN

Technical Specifications

Parameters and characteristics for this part

Specification	TSM045NB06CR RLG

Current - Continuous Drain (Id) @ 25°C	16 A, 104 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	104 nC
Input Capacitance (Ciss) (Max) @ Vds	6870 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerLDFN
Power Dissipation (Max)	3.1 W, 136 W
Rds On (Max) @ Id, Vgs	5 mOhm
Supplier Device Package	8-PDFN
Supplier Device Package [x]	5.2
Supplier Device Package [y]	5.75
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Supplier Device Package [y]	Supplier Device Package [x]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drain to Source Voltage (Vdss)	Technology	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	FET Type	Package / Case	Vgs(th) (Max) @ Id
Taiwan Semiconductor Corporation TSM045NB06CR RLG	-55 °C	175 ░C	5 mOhm	8-PDFN	5.75	5.2	16 A 104 A	Surface Mount	60 V	MOSFET (Metal Oxide)	3.1 W 136 W	6870 pF	104 nC	10 V	20 V	N-Channel	8-PowerLDFN	4 V
Taiwan Semiconductor Corporation TSM045NA03CR RLG	-55 °C	150 °C	4.5 mOhm	8-PDFN (5x6)			108 A	Surface Mount	30 V	MOSFET (Metal Oxide)		1194 pF	19 nC	4.5 V 10 V	20 V	N-Channel	8-PowerTDFN	2.5 V

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General part information

N-Channel 60 V 16A (Ta), 104A (Tc) 3.1W (Ta), 136W (Tc) Surface Mount 8-PDFN (5.2x5.75)

Technical documentation and resources