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MOSFET N-CH 60V 16A/104A 8PDFN
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Supplier Device Package | Supplier Device Package [y] | Supplier Device Package [x] | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Drain to Source Voltage (Vdss) | Technology | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | FET Type | Package / Case | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | -55 °C | 175 ░C | 5 mOhm | 8-PDFN | 5.75 | 5.2 | 16 A 104 A | Surface Mount | 60 V | MOSFET (Metal Oxide) | 3.1 W 136 W | 6870 pF | 104 nC | 10 V | 20 V | N-Channel | 8-PowerLDFN | 4 V |
Taiwan Semiconductor Corporation | -55 °C | 150 °C | 4.5 mOhm | 8-PDFN (5x6) | 108 A | Surface Mount | 30 V | MOSFET (Metal Oxide) | 1194 pF | 19 nC | 4.5 V 10 V | 20 V | N-Channel | 8-PowerTDFN | 2.5 V |