Specification	SSM3K116TU,LF

Current - Continuous Drain (Id) (Ta)	2.2 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max)	245 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	3-SMD, Flat Leads
Package Name	UFM
Power Dissipation (Max)	500 mW
Rds On (Max)	100 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	1.1 V

SSM3K116TU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 30 V, 2.2 A, 0.1 Ω@4.5V, SOT-323F(UFM)

Part	Package Name	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Current - Continuous Drain (Id) (Ta)	Input Capacitance (Ciss) (Max)	Rds On (Max)	FET Type	Vgs(th) (Max)	Mounting Type	Package / Case
Toshiba Semiconductor and Storage SSM3K116TU,LF	UFM	500 mW	30 V	12 V	-55 °C	150 °C	MOSFET (Metal Oxide)	2.5 V	4.5 V	2.2 A	245 pF	100 mOhm	N-Channel	1.1 V	Surface Mount	3-SMD Flat Leads

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