MOSFET N-CH 30V 2.2A UFM
| Part | Drain to Source Voltage (Vdss) | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Technology | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs [Max] | FET Type | Mounting Type | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 30 V | UFM | -55 °C | 150 °C | 12 V | 245 pF | MOSFET (Metal Oxide) | 2.2 A | 1.1 V | 2.5 V 4.5 V | 100 mOhm | N-Channel | Surface Mount | 500 mW |