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IRF6645TRPBF - INFINEON IRF6645TRPBF

IRF6645TRPBF

Active
Infineon Technologies

POWER MOSFET, N CHANNEL, 100 V, 25 A, 0.035 OHM, DIRECTFET SJ, SURFACE MOUNT

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IRF6645TRPBF - INFINEON IRF6645TRPBF

IRF6645TRPBF

Active
Infineon Technologies

POWER MOSFET, N CHANNEL, 100 V, 25 A, 0.035 OHM, DIRECTFET SJ, SURFACE MOUNT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF6645TRPBF
Current - Continuous Drain (Id) @ 25°C25 A, 5.7 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [x]20 nC
Input Capacitance (Ciss) (Max) @ Vds890 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseDirectFET™ Isometric SJ
Power Dissipation (Max)2.2 W, 42 W
Rds On (Max) @ Id, Vgs35 mOhm
Supplier Device PackageDIRECTFET™ SJ
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.9 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.62
10$ 1.04
100$ 0.71
500$ 0.63
Digi-Reel® 1$ 1.62
10$ 1.04
100$ 0.71
500$ 0.63
Tape & Reel (TR) 4800$ 0.63
NewarkEach (Supplied on Cut Tape) 1$ 1.72
10$ 1.17
25$ 1.08
50$ 0.99
100$ 0.90

Description

General part information

IRF6645 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Documents

Technical documentation and resources