POWER MOSFET, N CHANNEL, 100 V, 25 A, 0.035 OHM, DIRECTFET SJ, SURFACE MOUNT
| Part | Supplier Device Package | Package / Case | FET Type | Gate Charge (Qg) (Max) @ Vgs [x] | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Max] | Operating Temperature [Min] | Technology | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Mounting Type | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | DIRECTFET™ SJ | DirectFET™ Isometric SJ | N-Channel | 20 nC | 5.7 A 25 A | 150 °C | -40 °C | MOSFET (Metal Oxide) | 10 V | 20 V | Surface Mount | 35 mOhm | 100 V | 2.2 W 42 W | 4.9 V | 890 pF |