Description
General part information
IRF6616 Series
The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Technical Specifications
Parameters and characteristics for this part
| Specification | IRF6616TRPBF |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 19 A |
| Current - Continuous Drain (Id) (Tc) | 106 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 44 nC |
| Input Capacitance (Ciss) (Max) | 3765 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | DirectFET™ Isometric MX |
| Package Name | DIRECTFET™ MX |
| Power Dissipation (Max) | 2.8 W, 89 W |
| Rds On (Max) | 5 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.25 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources