IRF6616 Series
Manufacturer: INFINEON
IR MOSFET™ N-CHANNEL POWER MOSFET ; DIRECTFET™ M PACKAGE; 5 MOHM;
| Part | Technology | Current - Continuous Drain (Id) (Tc) | Current - Continuous Drain (Id) (Ta) | Rds On (Max) | Vgs (Max) | Input Capacitance (Ciss) (Max) | Gate Charge (Max) | Power Dissipation (Max) | Vgs(th) (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | FET Type | Drain to Source Voltage (Vdss) | Package / Case | Package Name | Operating Temperature (Min) | Operating Temperature (Max) | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | MOSFET (Metal Oxide) | 106 A | 19 A | 5 mOhm | 20 V | 3765 pF | 44 nC | 2.8 W 89 W | 2.25 V | 10 V | 4.5 V | N-Channel | 40 V | DirectFET™ Isometric MX | DIRECTFET™ MX | -40 °C | 150 °C | Surface Mount |
INFINEON | MOSFET (Metal Oxide) | 106 A | 19 A | 5 mOhm | 20 V | 3765 pF | 44 nC | 2.8 W 89 W | 2.25 V | 10 V | 4.5 V | N-Channel | 40 V | DirectFET™ Isometric MX | DIRECTFET™ MX | -40 °C | 150 °C | Surface Mount |