Specification	PMV25ENEAR

Current - Continuous Drain (Id) (Ta)	5.5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	18 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	597 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	TO-236AB
Power Dissipation (Max)	460 mW, 6.94 W
Qualification	AEC-Q101
Rds On (Max)	24 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

PMV25 Series

30 V, N-channel Trench MOSFET

Part	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package Name	Gate Charge (Max)	Power Dissipation (Max)	Vgs(th) (Max)	Current - Continuous Drain (Id) (Ta)	Drain to Source Voltage (Vdss)	Vgs (Max)	FET Type	Mounting Type	Qualification	Input Capacitance (Ciss) (Max)	Rds On (Max)	Package / Case	Grade	Operating Temperature (Min)	Operating Temperature (Max)	Technology
Nexperia USA Inc. PMV25ENEAR	10 V	4.5 V	TO-236AB	18 nC	6.94 W 460 mW	2.5 V	5.5 A	30 V	20 V	N-Channel	Surface Mount	AEC-Q101	597 pF	24 mOhm	SC-59 SOT-23-3 TO-236-3	Automotive	-55 °C	150 °C	MOSFET (Metal Oxide)