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30 V, N-channel Trench MOSFET
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Package Name | Gate Charge (Max) | Power Dissipation (Max) | Vgs(th) (Max) | Current - Continuous Drain (Id) (Ta) | Drain to Source Voltage (Vdss) | Vgs (Max) | FET Type | Mounting Type | Qualification | Input Capacitance (Ciss) (Max) | Rds On (Max) | Package / Case | Grade | Operating Temperature (Min) | Operating Temperature (Max) | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 10 V | 4.5 V | TO-236AB | 18 nC | 6.94 W 460 mW | 2.5 V | 5.5 A | 30 V | 20 V | N-Channel | Surface Mount | AEC-Q101 | 597 pF | 24 mOhm | SC-59 SOT-23-3 TO-236-3 | Automotive | -55 °C | 150 °C | MOSFET (Metal Oxide) |