IXTL2X200N085T

Obsolete

IXYS

MOSFET 2N-CH 85V 112A I5-PAK

Search across all available documentation for this part.

Obsolete

IXYS

MOSFET 2N-CH 85V 112A I5-PAK

Technical Specifications

Parameters and characteristics for this part

Specification	IXTL2X200N085T

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	112 A
Drain to Source Voltage (Vdss)	85 V
Gate Charge (Qg) (Max) @ Vgs [Max]	152 nC
Input Capacitance (Ciss) (Max) @ Vds	7600 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	ISOPLUSi5-Pak™
Power - Max [Max]	150 W
Rds On (Max) @ Id, Vgs	6 mOhm
Supplier Device Package	ISOPLUSi5-Pak™
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Package / Case	Vgs(th) (Max) @ Id	Technology	Configuration	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs
IXYS IXTL2X200N085T	-55 °C	175 ░C	152 nC	112 A	ISOPLUSi5-Pak™	7600 pF	Through Hole	ISOPLUSi5-Pak™	4 V	MOSFET (Metal Oxide)	2 N-Channel (Dual)	85 V	6 mOhm	150 W
IXYS IXTL2X220N075T	-55 °C	175 ░C		120 A	ISOPLUSi5-Pak™		Through Hole	ISOPLUSi5-Pak™	4 V	MOSFET (Metal Oxide)	2 N-Channel (Dual)	75 V	5.5 mOhm	150 W	165 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 85V 112A 150W Through Hole ISOPLUSi5-Pak™

Technical documentation and resources

No documents available