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MOSFET 2N-CH 85V 112A I5-PAK
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Package / Case | Vgs(th) (Max) @ Id | Technology | Configuration | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Power - Max [Max] | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | -55 °C | 175 ░C | 152 nC | 112 A | ISOPLUSi5-Pak™ | 7600 pF | Through Hole | ISOPLUSi5-Pak™ | 4 V | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 85 V | 6 mOhm | 150 W | |
IXYS | -55 °C | 175 ░C | 120 A | ISOPLUSi5-Pak™ | Through Hole | ISOPLUSi5-Pak™ | 4 V | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 75 V | 5.5 mOhm | 150 W | 165 nC |