SSM3K37CT,L3F

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Toshiba Semiconductor and Storage

MOSFET N-CH 20V 200MA CST3

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Toshiba Semiconductor and Storage

MOSFET N-CH 20V 200MA CST3

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3K37CT,L3F

Current - Continuous Drain (Id) @ 25°C	200 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	12 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-883, SC-101
Power Dissipation (Max)	100 mW
Rds On (Max) @ Id, Vgs	2.2 Ohm
Supplier Device Package	CST3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

Part	FET Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Vgs (Max)	Package / Case	Technology	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drain to Source Voltage (Vdss)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Operating Temperature	Power Dissipation (Max) [Max]
Toshiba Semiconductor and Storage SSM3K37FS,LF	N-Channel	2.2 Ohm	1.5 V 4.5 V	1 V	10 V	SC-75 SOT-416	MOSFET (Metal Oxide)	12 pF	SSM	20 V	Surface Mount	200 mA	100 mW
Toshiba Semiconductor and Storage SSM3K37CT,L3F	N-Channel	2.2 Ohm	1.5 V 4.5 V	1 V	10 V	SC-101 SOT-883	MOSFET (Metal Oxide)	12 pF	CST3	20 V	Surface Mount	200 mA	100 mW	150 °C
Toshiba Semiconductor and Storage SSM3K37MFV,L3F	N-Channel	2.2 Ohm	1.5 V 4.5 V	1 V	10 V	SOT-723	MOSFET (Metal Oxide)	12 pF	VESM	20 V	Surface Mount	250 mA		150 °C	150 mW

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General part information

N-Channel 20 V 200mA (Ta) 100mW (Ta) Surface Mount CST3

Technical documentation and resources