MOSFET N-CH 20V 200MA SSM
| Part | FET Type | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Vgs (Max) | Package / Case | Technology | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Drain to Source Voltage (Vdss) | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Operating Temperature | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | N-Channel | 2.2 Ohm | 1.5 V 4.5 V | 1 V | 10 V | SC-75 SOT-416 | MOSFET (Metal Oxide) | 12 pF | SSM | 20 V | Surface Mount | 200 mA | 100 mW | ||
Toshiba Semiconductor and Storage | N-Channel | 2.2 Ohm | 1.5 V 4.5 V | 1 V | 10 V | SC-101 SOT-883 | MOSFET (Metal Oxide) | 12 pF | CST3 | 20 V | Surface Mount | 200 mA | 100 mW | 150 °C | |
Toshiba Semiconductor and Storage | N-Channel | 2.2 Ohm | 1.5 V 4.5 V | 1 V | 10 V | SOT-723 | MOSFET (Metal Oxide) | 12 pF | VESM | 20 V | Surface Mount | 250 mA | 150 °C | 150 mW |