
2N7002,215
ActiveNexperia USA Inc.
TRANS MOSFET N-CH 60V 0.3A 3-PIN SOT-23 T/R

2N7002,215
ActiveNexperia USA Inc.
TRANS MOSFET N-CH 60V 0.3A 3-PIN SOT-23 T/R
Description
General part information
2N7002 Series
N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N7002,215 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 300 mA |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) | 50 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | TO-236-3, SOT-23-3, SC-59 |
| Package Name | TO-236AB |
| Power Dissipation (Max) | 830 mW |
| Rds On (Max) | 5 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 2.5 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Datasheet
plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body
Power MOSFET single-shot and repetitive avalanche ruggedness rating
Wave soldering profile
Nexperia package poster
Reel pack for SMD, 7"; Q3/T4 product orientation
RC Thermal Models
Reel pack for SMD, 11"; Q3/T4 product orientation
Failure signature of Electrical Overstress on Power MOSFETs
Understanding power MOSFET data sheet parameters
Power MOSFET frequently asked questions and answers
Questions about package outline drawings
Level shifting techniques in I2C-bus design
LFPAK MOSFET thermal design guide - Part 2
Reflow soldering profile
plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body
Understanding power MOSFET data sheet parameters
LFPAK MOSFET thermal design guide, Chinese version
Using power MOSFETs in parallel