Specification	IRS2111PBF

Channel Type	Synchronous
Current - Peak Output (Sink)	600 mA
Current - Peak Output (Source)	290 mA
Driven Configuration	Half-Bridge
Fall Time (Typ)	35 ns
Gate Channel	N-Channel
Gate Type	IGBT, N-Channel MOSFET, MOSFET
High Side Voltage - Max (Bootstrap)	600 V
Input Type	Inverting, Non-Inverting
Logic Voltage - VIH	12.6 V
Logic Voltage - VIL	8.3 V
Mounting Type	Through Hole
Number of Drivers	2
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.3 in
Package Name	8-DIP, 8-PDIP
Package Width	7.62 mm
Rise Time (Typ)	75 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	10 VDC

IRS2111 Series

Part	Gate Type	Operating Temperature (Min)	Operating Temperature (Max)	Input Type	Number of Drivers	Fall Time (Typ)	Rise Time (Typ)	Gate Channel	Channel Type	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Current - Peak Output (Sink)	Current - Peak Output (Source)	High Side Voltage - Max (Bootstrap)	Package Length	Package Name	Package Width	Logic Voltage - VIL	Logic Voltage - VIH	Mounting Type	Driven Configuration
INFINEON IRS2111PBF	IGBT MOSFET N-Channel MOSFET	-40 °C	150 °C	Inverting Non-Inverting	2	35 ns	75 ns	N-Channel	Synchronous	10 VDC	20 V	600 mA	290 mA	600 V	0.3 in	8-DIP 8-PDIP	7.62 mm	8.3 V	12.6 V	Through Hole	Half-Bridge
INFINEON IRS2111SPBF	IGBT MOSFET N-Channel MOSFET	-40 °C	150 °C	Inverting Non-Inverting	2	35 ns	75 ns	N-Channel	Synchronous	10 VDC	20 V	600 mA	290 mA	600 V	0.154 in	8-SOIC	3.9 mm	8.3 V	12.6 V	Surface Mount	Half-Bridge
INFINEON IRS2111PBF	IGBT MOSFET N-Channel MOSFET	-40 °C	150 °C	Inverting Non-Inverting	2	35 ns	75 ns	N-Channel	Synchronous	10 VDC	20 V	600 mA	290 mA	600 V	0.3 in	8-DIP 8-PDIP	7.62 mm	8.3 V	12.6 V	Through Hole	Half-Bridge
INFINEON IRS2111STRPBF	IGBT MOSFET N-Channel MOSFET	-40 °C	150 °C	Inverting Non-Inverting	2	35 ns	75 ns	N-Channel	Synchronous	10 VDC	20 V	600 mA	290 mA	600 V	0.154 in	8-SOIC	3.9 mm	8.3 V	12.6 V	Surface Mount	Half-Bridge

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