IRS2111 Series
Manufacturer: INFINEON
IC GATE DRVR HALF-BRIDGE 8DIP
| Part | Gate Type | Operating Temperature (Min) | Operating Temperature (Max) | Input Type | Number of Drivers | Fall Time (Typ) | Rise Time (Typ) | Gate Channel | Channel Type | Voltage - Supply (Minimum) | Voltage - Supply (Maximum) | Current - Peak Output (Sink) | Current - Peak Output (Source) | High Side Voltage - Max (Bootstrap) | Package Length | Package Name | Package Width | Logic Voltage - VIL | Logic Voltage - VIH | Mounting Type | Driven Configuration |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | IGBT MOSFET N-Channel MOSFET | -40 °C | 150 °C | Inverting Non-Inverting | 2 | 35 ns | 75 ns | N-Channel | Synchronous | 10 VDC | 20 V | 600 mA | 290 mA | 600 V | 0.3 in | 8-DIP 8-PDIP | 7.62 mm | 8.3 V | 12.6 V | Through Hole | Half-Bridge |
INFINEON | IGBT MOSFET N-Channel MOSFET | -40 °C | 150 °C | Inverting Non-Inverting | 2 | 35 ns | 75 ns | N-Channel | Synchronous | 10 VDC | 20 V | 600 mA | 290 mA | 600 V | 0.154 in | 8-SOIC | 3.9 mm | 8.3 V | 12.6 V | Surface Mount | Half-Bridge |
INFINEON | IGBT MOSFET N-Channel MOSFET | -40 °C | 150 °C | Inverting Non-Inverting | 2 | 35 ns | 75 ns | N-Channel | Synchronous | 10 VDC | 20 V | 600 mA | 290 mA | 600 V | 0.3 in | 8-DIP 8-PDIP | 7.62 mm | 8.3 V | 12.6 V | Through Hole | Half-Bridge |
INFINEON | IGBT MOSFET N-Channel MOSFET | -40 °C | 150 °C | Inverting Non-Inverting | 2 | 35 ns | 75 ns | N-Channel | Synchronous | 10 VDC | 20 V | 600 mA | 290 mA | 600 V | 0.154 in | 8-SOIC | 3.9 mm | 8.3 V | 12.6 V | Surface Mount | Half-Bridge |