IXFX30N110P

Obsolete

IXYS

MOSFET N-CH 1100V 30A PLUS247-3

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Obsolete

IXYS

MOSFET N-CH 1100V 30A PLUS247-3

Technical Specifications

Parameters and characteristics for this part

Specification	IXFX30N110P

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	1100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	235 nC
Input Capacitance (Ciss) (Max) @ Vds	13600 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3 Variant
Power Dissipation (Max)	960 W
Rds On (Max) @ Id, Vgs	360 mOhm
Supplier Device Package	PLUS247™-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	6.5 V

Part	Supplier Device Package	Technology	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Mounting Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs
IXYS IXFX30N100Q2	PLUS247™-3	MOSFET (Metal Oxide)	1000 V	8200 pF	N-Channel	TO-247-3 Variant	30 A	186 nC	5 V	-55 °C	150 °C	400 mOhm	735 W	Through Hole	30 V	10 V
IXYS IXFX30N110P	PLUS247™-3	MOSFET (Metal Oxide)	1100 V	13600 pF	N-Channel	TO-247-3 Variant	30 A		6.5 V	-55 °C	150 °C	360 mOhm	960 W	Through Hole	30 V	10 V	235 nC
IXYS IXFX30N50Q	PLUS247™-3	MOSFET (Metal Oxide)	500 V	3950 pF	N-Channel	TO-247-3 Variant	30 A		4.5 V	-55 °C	150 °C	160 mOhm	416 W	Through Hole	20 V	10 V	150 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 1100 V 30A (Tc) 960W (Tc) Through Hole PLUS247™-3

Technical documentation and resources

No documents available