MOSFET N-CH 1000V 30A PLUS247-3
| Part | Supplier Device Package | Technology | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Package / Case | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Mounting Type | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | PLUS247™-3 | MOSFET (Metal Oxide) | 1000 V | 8200 pF | N-Channel | TO-247-3 Variant | 30 A | 186 nC | 5 V | -55 °C | 150 °C | 400 mOhm | 735 W | Through Hole | 30 V | 10 V | |
IXYS | PLUS247™-3 | MOSFET (Metal Oxide) | 1100 V | 13600 pF | N-Channel | TO-247-3 Variant | 30 A | 6.5 V | -55 °C | 150 °C | 360 mOhm | 960 W | Through Hole | 30 V | 10 V | 235 nC | |
IXYS | PLUS247™-3 | MOSFET (Metal Oxide) | 500 V | 3950 pF | N-Channel | TO-247-3 Variant | 30 A | 4.5 V | -55 °C | 150 °C | 160 mOhm | 416 W | Through Hole | 20 V | 10 V | 150 nC |