NX3008PBK,215

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Nexperia USA Inc.

30 V, 230 MA P-CHANNEL TRENCH MOSFET

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NX3008PBK,215

Active

Nexperia USA Inc.

30 V, 230 MA P-CHANNEL TRENCH MOSFET

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Description Specifications Series Pricing CAD Documents

Description

General part information

NX3008PBK Series

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

Specification	NX3008PBK,215

Current - Continuous Drain (Id) (Ta)	230 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	0.72 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	46 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	TO-236AB
Power Dissipation (Max)	1.14 W, 350 mW
Qualification	AEC-Q101
Rds On (Max)	4.1 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	1.1 V

NX3008PBK Series

30 V, 230 mA P-channel Trench MOSFET

Part	Grade	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Mounting Type	Current - Continuous Drain (Id) (Ta)	Technology	Vgs (Max)	Rds On (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Package Name	Gate Charge (Max)	Power Dissipation (Max)	Package / Case	FET Type	Qualification
Nexperia USA Inc. NX3008PBK,215	Automotive	-55 °C	150 °C	46 pF	2.5 V	4.5 V	Surface Mount	230 mA	MOSFET (Metal Oxide)	8 V	4.1 Ohm	30 V	1.1 V	TO-236AB	0.72 nC	1.14 W 350 mW	SC-59 SOT-23-3 TO-236-3	P-Channel	AEC-Q101