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30 V, 230 mA P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, 230 mA P-channel Trench MOSFET
30 V, 230 mA P-channel Trench MOSFET
| Part | Grade | Operating Temperature (Min) | Operating Temperature (Max) | Input Capacitance (Ciss) (Max) | Drive Voltage (Max Rds On) | Drive Voltage (Min Rds On) | Mounting Type | Current - Continuous Drain (Id) (Ta) | Technology | Vgs (Max) | Rds On (Max) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) | Package Name | Gate Charge (Max) | Power Dissipation (Max) | Package / Case | FET Type | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | Automotive | -55 °C | 150 °C | 46 pF | 2.5 V | 4.5 V | Surface Mount | 230 mA | MOSFET (Metal Oxide) | 8 V | 4.1 Ohm | 30 V | 1.1 V | TO-236AB | 0.72 nC | 1.14 W 350 mW | SC-59 SOT-23-3 TO-236-3 | P-Channel | AEC-Q101 |