STPSC1006G-TR

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STMicroelectronics

DIODE SIL CARBIDE 600V 10A D2PAK

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STMicroelectronics

DIODE SIL CARBIDE 600V 10A D2PAK

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General part information

Diode 600 V 10A Surface Mount D2PAK

Technical documentation and resources

Parameters and characteristics commom to parts in this series

Specification	STPSC1006G-TR	STPSC1006 Series

Capacitance @ Vr, F	650 pF	650 pF
Current - Average Rectified (Io)	10 A	10 A
Current - Reverse Leakage @ Vr	150 µA	150 - 300 µA
Mounting Type	Surface Mount	Through Hole, Surface Mount
Operating Temperature - Junction [Max]	175 ░C	175 ░C
Operating Temperature - Junction [Min]	-40 °C	-40 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3	TO-220-2, D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Reverse Recovery Time (trr)	0 ns	0 ns
Speed	No Recovery Time	No Recovery Time
Supplier Device Package	D2PAK	TO-220AC, D2PAK
Technology	SiC (Silicon Carbide) Schottky	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	600 V	600 V
Voltage - Forward (Vf) (Max) @ If	1.7 V	1.7 - 1.75 V

DIODE SIL CARB 600V 10A TO220AC

Part	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Package / Case	Speed	Capacitance @ Vr, F	Supplier Device Package	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Current - Average Rectified (Io)
STMicroelectronics STPSC1006D	1.75 V	0 ns	Through Hole	600 V	SiC (Silicon Carbide) Schottky	TO-220-2	No Recovery Time	650 pF	TO-220AC	300 µA	-40 °C	175 ░C	10 A
STMicroelectronics STPSC1006G-TR	1.7 V	0 ns	Surface Mount	600 V	SiC (Silicon Carbide) Schottky	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB	No Recovery Time	650 pF	D2PAK	150 µA	-40 °C	175 ░C	10 A