DIODE SIL CARB 600V 10A TO220AC
| Part | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Mounting Type | Voltage - DC Reverse (Vr) (Max) [Max] | Technology | Package / Case | Speed | Capacitance @ Vr, F | Supplier Device Package | Current - Reverse Leakage @ Vr | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Current - Average Rectified (Io) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics STPSC1006D | 1.75 V | 0 ns | Through Hole | 600 V | SiC (Silicon Carbide) Schottky | TO-220-2 | No Recovery Time | 650 pF | TO-220AC | 300 µA | -40 °C | 175 ░C | 10 A |
STMicroelectronics STPSC1006G-TR | 1.7 V | 0 ns | Surface Mount | 600 V | SiC (Silicon Carbide) Schottky | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB | No Recovery Time | 650 pF | D2PAK | 150 µA | -40 °C | 175 ░C | 10 A |