SUD70090E-GE3

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Vishay General Semiconductor - Diodes Division

MOSFET N-CH 100V 50A TO252

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Vishay General Semiconductor - Diodes Division

MOSFET N-CH 100V 50A TO252

Technical Specifications

Parameters and characteristics for this part

Specification	SUD70090E-GE3

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	50 nC
Input Capacitance (Ciss) (Max) @ Vds	1950 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	8.9 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Package / Case	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	FET Type	Technology	Supplier Device Package	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)
Vishay General Semiconductor - Diodes Division SUD70090E-GE3	DPAK (2 Leads + Tab) SC-63 TO-252-3	4 V	1950 pF	50 nC	50 A	20 V	-55 °C	175 ░C	100 V	Surface Mount	10 V	7.5 V	N-Channel	MOSFET (Metal Oxide)	TO-252AA	8.9 mOhm	125 W

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General part information

N-Channel 100 V 50A (Tc) 125W (Tc) Surface Mount TO-252AA

Technical documentation and resources