MOSFET N-CH 100V 50A TO252
| Part | Package / Case | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | FET Type | Technology | Supplier Device Package | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division  | DPAK (2 Leads + Tab)  SC-63  TO-252-3  | 4 V  | 1950 pF  | 50 nC  | 50 A  | 20 V  | -55 °C  | 175 ░C  | 100 V  | Surface Mount  | 10 V  | 7.5 V  | N-Channel  | MOSFET (Metal Oxide)  | TO-252AA  | 8.9 mOhm  | 125 W  |