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PMCB60XNZ

PMCB60XNZ

Unknown
Nexperia USA Inc.

30 V, N-CHANNEL TRENCH MOSFET

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PMCB60XNZ

PMCB60XNZ

Unknown
Nexperia USA Inc.

30 V, N-CHANNEL TRENCH MOSFET

Find alt

Description

General part information

PMCB60XN Series

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DSN1006-3 (SOT8026) Surface-Mounted Device (SMD) package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

SpecificationPMCB60XNZ
Current - Continuous Drain (Id) (Ta)4 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On)1.8 V
Drive Voltage (Min Rds On)4.5 V
FET TypeN-Channel
Gate Charge (Max)2.7 nC, 2.7 nC
Input Capacitance (Ciss) (Max)241 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case3-XFDFN
Package NameDSN1006-3
Power Dissipation (Max)480 mW, 7 W
Rds On (Max)50 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12 V
Vgs(th) (Max)1.1 V

Pricing

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CAD

3D models and CAD resources for this part