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30 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DSN1006-3 (SOT8026) Surface-Mounted Device (SMD) package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Package Name | Current - Continuous Drain (Id) (Ta) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Gate Charge (Max) | Operating Temperature (Min) | Operating Temperature (Max) | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Rds On (Max) | Vgs (Max) | Vgs(th) (Max) | Mounting Type | FET Type | Package / Case | Technology | Input Capacitance (Ciss) (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | DSN1006-3 | 4 A | 4.5 V | 1.8 V | 2.7 nC 2.7 nC | -55 °C | 150 °C | 7 W 480 mW | 30 V | 50 mOhm | 12 V | 1.1 V | Surface Mount | N-Channel | 3-XFDFN | MOSFET (Metal Oxide) | 241 pF |