SCT10N120H

Obsolete

STMicroelectronics

SICFET N-CH 1200V 12A H2PAK-2

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Obsolete

STMicroelectronics

SICFET N-CH 1200V 12A H2PAK-2

Technical Specifications

Parameters and characteristics for this part

Specification	SCT10N120H

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	1200 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	290 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	200 C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	690 mOhm
Supplier Device Package	H2Pak-2
Vgs (Max) [Max]	25 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id	3.5 V

Part	FET Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Vgs (Max) [Min]	Vgs (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type
STMicroelectronics SCT10N120H	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	290 pF	H2Pak-2	-10 V	25 V	12 A	150 W	1200 V	-55 °C	200 C	690 mOhm	3.5 V	22 nC	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 1200 V 12A (Tc) 150W (Tc) Surface Mount H2Pak-2

Technical documentation and resources

No documents available