SCT10 Series
Manufacturer: STMicroelectronics
Beta
⌘K
SICFET N-CH 1200V 12A H2PAK-2
| Part | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) | Vgs(th) (Max) | Technology | Drain to Source Voltage (Vdss) | Package Name | Package / Case | Vgs (Max) Negative | Vgs (Max) Positive | FET Type | Operating Temperature (Min) | Operating Temperature (Max) | Mounting Type | Gate Charge (Max) | Input Capacitance (Ciss) (Max) | Current - Continuous Drain (Id) (Tc) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | 150 W | 20 V | 690 mOhm | 3.5 V | SiCFET (Silicon Carbide) | 1200 V | H2Pak-2 | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | -10 V | 25 V | N-Channel | -55 °C | 200 °C | Surface Mount | 22 nC | 290 pF | 12 A |