IPI037N08N3GXKSA1

Obsolete

Infineon Technologies

MOSFET N-CH 80V 100A TO262-3

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Obsolete

Infineon Technologies

MOSFET N-CH 80V 100A TO262-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPI037N08N3GXKSA1

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	117 nC
Input Capacitance (Ciss) (Max) @ Vds	8110 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	214 W
Rds On (Max) @ Id, Vgs	3.75 mOhm
Supplier Device Package	PG-TO262-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	3.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs(th) (Max) @ Id [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Supplier Device Package	FET Type	Drain to Source Voltage (Vdss)
Infineon Technologies IPI037N08N3GXKSA1	100 A	-55 °C	175 ░C	8110 pF	I2PAK TO-262-3 Long Leads TO-262AA	3.5 V	Through Hole	3.75 mOhm	6 V 10 V	214 W	MOSFET (Metal Oxide)	117 nC	20 V	PG-TO262-3	N-Channel	80 V
Infineon Technologies IPI037N08N3GHKSA1	100 A	-55 °C	175 ░C	8110 pF	I2PAK TO-262-3 Long Leads TO-262AA	3.5 V	Through Hole	3.75 mOhm	6 V 10 V	214 W	MOSFET (Metal Oxide)	117 nC	20 V	PG-TO262-3	N-Channel	80 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 80 V 100A (Tc) 214W (Tc) Through Hole PG-TO262-3

Technical documentation and resources