IPI037N Series

Catalog

MOSFET N-CH 80V 100A TO262-3

Part	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs(th) (Max) @ Id [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Supplier Device Package	FET Type	Drain to Source Voltage (Vdss)
Infineon Technologies IPI037N08N3GXKSA1	100 A	-55 °C	175 ░C	8110 pF	I2PAK TO-262-3 Long Leads TO-262AA	3.5 V	Through Hole	3.75 mOhm	6 V 10 V	214 W	MOSFET (Metal Oxide)	117 nC	20 V	PG-TO262-3	N-Channel	80 V
Infineon Technologies IPI037N08N3GHKSA1	100 A	-55 °C	175 ░C	8110 pF	I2PAK TO-262-3 Long Leads TO-262AA	3.5 V	Through Hole	3.75 mOhm	6 V 10 V	214 W	MOSFET (Metal Oxide)	117 nC	20 V	PG-TO262-3	N-Channel	80 V