DMP1245UFCL-7

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Diodes Inc

POWER MOSFET, P CHANNEL, 12 V, 6.6 A, 0.025 OHM, X1-DFN1616, SURFACE MOUNT

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Active

Diodes Inc

POWER MOSFET, P CHANNEL, 12 V, 6.6 A, 0.025 OHM, X1-DFN1616, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	DMP1245UFCL-7

Current - Continuous Drain (Id) @ 25°C	6.6 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	26.1 nC
Input Capacitance (Ciss) (Max) @ Vds	1357.4 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-PowerUFDFN
Power Dissipation (Max)	613 mW
Rds On (Max) @ Id, Vgs [Max]	29 mOhm
Supplier Device Package	X1-DFN1616-6 (Type E)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	950 mV

P-Channel Enhancement Mode MOSFET

Part	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Technology	Vgs(th) (Max) @ Id	Supplier Device Package	FET Type	Mounting Type
Diodes Inc DMP1245UFCL-7	-55 °C	150 °C	12 V	1.5 V 4.5 V	6.6 A	6-PowerUFDFN	29 mOhm	613 mW	26.1 nC	1357.4 pF	8 V	MOSFET (Metal Oxide)	950 mV	X1-DFN1616-6 (Type E)	P-Channel	Surface Mount

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