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P-Channel Enhancement Mode MOSFET
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P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Package / Case | Rds On (Max) @ Id, Vgs [Max] | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Technology | Vgs(th) (Max) @ Id | Supplier Device Package | FET Type | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | -55 °C | 150 °C | 12 V | 1.5 V 4.5 V | 6.6 A | 6-PowerUFDFN | 29 mOhm | 613 mW | 26.1 nC | 1357.4 pF | 8 V | MOSFET (Metal Oxide) | 950 mV | X1-DFN1616-6 (Type E) | P-Channel | Surface Mount |