BSZ0908NDXTMA2

Obsolete

Infineon Technologies

MOSFET 2N-CH 30V 4.8A WISON-8

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Obsolete

Infineon Technologies

MOSFET 2N-CH 30V 4.8A WISON-8

Technical Specifications

Parameters and characteristics for this part

Specification	BSZ0908NDXTMA2

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C [Max]	7.6 A
Current - Continuous Drain (Id) @ 25°C [Min]	4.8 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs	3 nC
Gate Charge (Qg) (Max) @ Vgs	6.4 nC
Input Capacitance (Ciss) (Max) @ Vds	730 pF, 340 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power - Max	860 mW, 700 mW
Rds On (Max) @ Id, Vgs	18 mOhm, 9 mOhm
Supplier Device Package	PG-WISON-8
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2 V

Part	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Configuration	Technology	Rds On (Max) @ Id, Vgs	Supplier Device Package	FET Feature	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C [Max]	Current - Continuous Drain (Id) @ 25°C [Min]	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Power - Max
Infineon Technologies BSZ0908NDXTMA2	3 nC	6.4 nC	2 N-Channel (Dual)	MOSFET (Metal Oxide)	9 mOhm 18 mOhm	PG-WISON-8	4.5V Drive Logic Level Gate	340 pF 730 pF	7.6 A	4.8 A	30 V	Surface Mount	8-PowerVDFN	-55 °C	150 °C	2 V	700 mW 860 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 4.8A (Ta), 7.6A (Ta) 700mW (Ta), 860mW (Ta) Surface Mount PG-WISON-8

Technical documentation and resources

No documents available