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MOSFET 2N-CH 30V 4.8A WISON-8
| Part | Gate Charge (Qg) (Max) @ Vgs | Gate Charge (Qg) (Max) @ Vgs | Configuration | Technology | Rds On (Max) @ Id, Vgs | Supplier Device Package | FET Feature | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C [Max] | Current - Continuous Drain (Id) @ 25°C [Min] | Drain to Source Voltage (Vdss) | Mounting Type | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Power - Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 3 nC | 6.4 nC | 2 N-Channel (Dual) | MOSFET (Metal Oxide) | 9 mOhm 18 mOhm | PG-WISON-8 | 4.5V Drive Logic Level Gate | 340 pF 730 pF | 7.6 A | 4.8 A | 30 V | Surface Mount | 8-PowerVDFN | -55 °C | 150 °C | 2 V | 700 mW 860 mW |