IPI030N10N3GXKSA1
ObsoleteInfineon Technologies
OPTIMOS™ 3 N-CHANNEL POWER MOSFET 100 V ; I2PAK TO-262 PACKAGE; 3 MOHM;
Deep-Dive with AI
Search across all available documentation for this part.
IPI030N10N3GXKSA1
ObsoleteInfineon Technologies
OPTIMOS™ 3 N-CHANNEL POWER MOSFET 100 V ; I2PAK TO-262 PACKAGE; 3 MOHM;
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IPI030N10N3GXKSA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 100 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 206 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 14800 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-262AA, TO-262-3 Long Leads, I2PAK |
| Power Dissipation (Max) [Max] | 300 W |
| Rds On (Max) @ Id, Vgs | 3 mOhm |
| Supplier Device Package | PG-TO262-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
IPI030 Series
Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on)and FOM (figure of merit).
Documents
Technical documentation and resources