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OPTIMOS™ 3 N-CHANNEL POWER MOSFET 100 V ; I2PAK TO-262 PACKAGE; 3 MOHM;
| Part | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Power Dissipation (Max) [Max] | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Technology | Package / Case | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 3.5 V | 100 V | 100 A | Through Hole | -55 °C | 175 ░C | N-Channel | 300 W | 20 V | 14800 pF | PG-TO262-3 | 3 mOhm | 6 V 10 V | MOSFET (Metal Oxide) | I2PAK TO-262-3 Long Leads TO-262AA | 206 nC |