IRF7314TRPBF

Obsolete

Infineon Technologies

MOSFET, P-CH, 20V, 5.3A, SOIC ROHS COMPLIANT: YES

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DocumentsIR Part Numbering System Datasheet

IRF7314TRPBF

Obsolete

Infineon Technologies

MOSFET, P-CH, 20V, 5.3A, SOIC ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsIR Part Numbering System Datasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7314TRPBF

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	5.3 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	29 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	58 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	700 mV

IRF731 Series

Part	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Package / Case	Package / Case [y]	Package / Case [x]	FET Feature	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]
Infineon Technologies IRF7314TRPBF	Surface Mount	-55 °C	150 °C	2 P-Channel	MOSFET (Metal Oxide)	29 nC	20 V	2 W	5.3 A	8-SO	700 mV	58 mOhm	8-SOIC	3.9 mm	0.154 in	Logic Level Gate
Infineon Technologies IRF7316GTRPBF	Surface Mount	-55 °C	150 °C	2 P-Channel	MOSFET (Metal Oxide)	34 nC	30 V	2 W	4.9 A	8-SO	1 V	58 mOhm	8-SOIC	3.9 mm	0.154 in	Logic Level Gate	710 pF
Infineon Technologies IRF7311TR	Surface Mount	-55 °C	150 °C	2 N-Channel (Dual)	MOSFET (Metal Oxide)	27 nC	20 V	2 W	6.6 A	8-SO	700 mV		8-SOIC	3.9 mm	0.154 in	Logic Level Gate	900 pF	29 mOhm
Infineon Technologies IRF7311TRPBF	Surface Mount	-55 °C	150 °C	2 N-Channel (Dual)	MOSFET (Metal Oxide)	27 nC	20 V	2 W	6.6 A	8-SO	700 mV		8-SOIC	3.9 mm	0.154 in	Logic Level Gate	900 pF	29 mOhm
Infineon Technologies IRF7313QTRPBF	Surface Mount			2 N-Channel (Dual)	MOSFET (Metal Oxide)	33 nC	30 V	2 W	6.5 A	8-SO	1 V	29 mOhm	8-SOIC	3.9 mm	0.154 in		650 pF
Infineon Technologies IRF7316TR	Surface Mount	-55 °C	150 °C	2 P-Channel	MOSFET (Metal Oxide)	34 nC	30 V	2 W	4.9 A	8-SO	1 V	58 mOhm	8-SOIC	3.9 mm	0.154 in	Logic Level Gate	710 pF
Infineon Technologies IRF7316PBF	Surface Mount	-55 °C	150 °C	2 P-Channel	MOSFET (Metal Oxide)	34 nC	30 V	2 W	4.9 A	8-SO	1 V	58 mOhm	8-SOIC	3.9 mm	0.154 in	Logic Level Gate	710 pF
Infineon Technologies IRF7313PBF	Surface Mount	-55 °C	150 °C	2 N-Channel (Dual)	MOSFET (Metal Oxide)	33 nC	30 V	2 W	6.5 A	8-SO	1 V	29 mOhm	8-SOIC	3.9 mm	0.154 in		650 pF
Infineon Technologies IRF7314QTRPBF	Surface Mount			2 P-Channel	MOSFET (Metal Oxide)	29 nC	20 V	2.4 W	5.2 A	8-SO	700 mV	58 mOhm	8-SOIC	3.9 mm	0.154 in	Logic Level Gate	913 pF
Infineon Technologies IRF7313TRPBF-1	Surface Mount	-55 °C	150 °C	2 N-Channel (Dual)	MOSFET (Metal Oxide)	33 nC	30 V	2 W	6.5 A	8-SOIC	1 V	29 mOhm	8-SOIC	3.9 mm	0.154 in		650 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Newark	Each (Supplied on Full Reel)	4000	$ 0.36
		8000	$ 0.35
		16000	$ 0.34
		24000	$ 0.34
		40000	$ 0.34

Description

General part information

IRF731 Series

The IR MOSFET family ofpower MOSFETsutilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters,SMPS,lighting, load switches as well as battery powered applications.

Documents

Technical documentation and resources