MOSFET, P-CH, 20V, 5.3A, SOIC ROHS COMPLIANT: YES
| Part | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Configuration | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Power - Max [Max] | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Package / Case | Package / Case [y] | Package / Case [x] | FET Feature | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | Surface Mount | -55 °C | 150 °C | 2 P-Channel | MOSFET (Metal Oxide) | 29 nC | 20 V | 2 W | 5.3 A | 8-SO | 700 mV | 58 mOhm | 8-SOIC | 3.9 mm | 0.154 in | Logic Level Gate | ||
Infineon Technologies | Surface Mount | -55 °C | 150 °C | 2 P-Channel | MOSFET (Metal Oxide) | 34 nC | 30 V | 2 W | 4.9 A | 8-SO | 1 V | 58 mOhm | 8-SOIC | 3.9 mm | 0.154 in | Logic Level Gate | 710 pF | |
Infineon Technologies | Surface Mount | -55 °C | 150 °C | 2 N-Channel (Dual) | MOSFET (Metal Oxide) | 27 nC | 20 V | 2 W | 6.6 A | 8-SO | 700 mV | 8-SOIC | 3.9 mm | 0.154 in | Logic Level Gate | 900 pF | 29 mOhm | |
Infineon Technologies | Surface Mount | -55 °C | 150 °C | 2 N-Channel (Dual) | MOSFET (Metal Oxide) | 27 nC | 20 V | 2 W | 6.6 A | 8-SO | 700 mV | 8-SOIC | 3.9 mm | 0.154 in | Logic Level Gate | 900 pF | 29 mOhm | |
Infineon Technologies | Surface Mount | 2 N-Channel (Dual) | MOSFET (Metal Oxide) | 33 nC | 30 V | 2 W | 6.5 A | 8-SO | 1 V | 29 mOhm | 8-SOIC | 3.9 mm | 0.154 in | 650 pF | ||||
Infineon Technologies | Surface Mount | -55 °C | 150 °C | 2 P-Channel | MOSFET (Metal Oxide) | 34 nC | 30 V | 2 W | 4.9 A | 8-SO | 1 V | 58 mOhm | 8-SOIC | 3.9 mm | 0.154 in | Logic Level Gate | 710 pF | |
Infineon Technologies | Surface Mount | -55 °C | 150 °C | 2 P-Channel | MOSFET (Metal Oxide) | 34 nC | 30 V | 2 W | 4.9 A | 8-SO | 1 V | 58 mOhm | 8-SOIC | 3.9 mm | 0.154 in | Logic Level Gate | 710 pF | |
Infineon Technologies | Surface Mount | -55 °C | 150 °C | 2 N-Channel (Dual) | MOSFET (Metal Oxide) | 33 nC | 30 V | 2 W | 6.5 A | 8-SO | 1 V | 29 mOhm | 8-SOIC | 3.9 mm | 0.154 in | 650 pF | ||
Infineon Technologies | Surface Mount | 2 P-Channel | MOSFET (Metal Oxide) | 29 nC | 20 V | 2.4 W | 5.2 A | 8-SO | 700 mV | 58 mOhm | 8-SOIC | 3.9 mm | 0.154 in | Logic Level Gate | 913 pF | |||
Infineon Technologies | Surface Mount | -55 °C | 150 °C | 2 N-Channel (Dual) | MOSFET (Metal Oxide) | 33 nC | 30 V | 2 W | 6.5 A | 8-SOIC | 1 V | 29 mOhm | 8-SOIC | 3.9 mm | 0.154 in | 650 pF |