IRF7389

Obsolete

Infineon Technologies

MOSFET N/P-CH 30V 8SO

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Obsolete

Infineon Technologies

MOSFET N/P-CH 30V 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7389

Configuration	N and P-Channel
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	33 nC
Input Capacitance (Ciss) (Max) @ Vds	650 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2.5 W
Rds On (Max) @ Id, Vgs	29 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Package / Case	Package / Case [y]	Package / Case [x]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Mounting Type	Power - Max [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Configuration	FET Feature	Rds On (Max) @ Id, Vgs
Infineon Technologies IRF7389	8-SOIC	3.9 mm	0.154 in	8-SO	650 pF	1 V	-55 °C	150 °C	MOSFET (Metal Oxide)	Surface Mount	2.5 W	30 V	33 nC	N and P-Channel	Logic Level Gate	29 mOhm
Infineon Technologies IRF7389TRPBF	8-SOIC	3.9 mm	0.154 in	8-SO	650 pF	1 V	-55 °C	150 °C	MOSFET (Metal Oxide)	Surface Mount	2.5 W	30 V	33 nC	N and P-Channel	Logic Level Gate	29 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$